Samsung Releases UFS 4.0 Internal Memory with 2X the Speed of UFS 3.1


 Samsung officially announced UFS 4.0 as the latest version of the storage solution. It is the direct successor to UFS 3.1, claimed to bring significant improvements to the speed and efficiency of devices such as phones, tablets and foldable devices.

UFS 4.0 offers speeds of up to 23.2Gbps per lane, double that of UFS 3.1. According to Samsung, UFS 4.0 is ideal for 5G smartphones that require processing large amounts of data.



The company also claims that the new 7th generation V-NAND technology can achieve sequential read performance of up to 4,200 MB/s and sequential write speed of up to 2,800 MB/s, which is significantly faster than UFS 3.1 storage.




Furthermore, it is said that the increase in power efficiency is also favored. UFS 4.0 has 46% better power efficiency compared to the previous version. Sequential read speeds are touted to be 6.0MB/s per mA.


But what's even more interesting is that Samsung has managed to combine all of these improvements into a smaller package. Dimensions are 11mm x 13mm x 1mm at the maximum available size. This can provide better space utilization and design convenience.


UFS 4.0 will be available in different storage capacities up to 1TB. Mass production will begin in the third quarter of this year. Commercial availability is expected on the Galaxy Z Flip 4, Galaxy Z Fold 4, and Galaxy S23.

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