Micron yesterday announced they have started production of their UFS 4.0 storage in 256GB, 512GB and 1TB options. Each storage has the ability to write at a speed of 4000 MBps and read at a speed of 4300 MBps.
This puts it faster than Samsung's UFS 4.0 storage which has the ability to write at a speed of 2800 MBps and read at a speed of 4200 MBps. Speed is achieved using 232-layer 3D NAND architecture technology. Micron says their chips also save up to 25% power consumption and offer up to 2x speed improvements over UFS 2.0 storage.
The storage chip has already been given to customers to test with the first device using it hitting the market in H2 2023.
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