Samsung recently showed off its 10th generation V-NAND chip components, which will be developed to power SSD storage that not only features a large amount of storage, but also has extremely fast data transfer rates.
Samsung's 10th generation V-NAND chips feature more than 400 layers, allowing each of these V-NAND chips to feature 1Tb or 128GB of storage on each chip. More interestingly, Samsung's 10th generation V-NAND chips use TLC technology and not QLC.
The advantage shown in TLC chips is faster data read and write speeds, although QLC chips come with larger storage capacities. However, Samsung says that each of these 10th generation V-NAND chips comes with a data density of 28 Gb/mm², which is not far from Samsung's 1Tb V-NAND QLC chip which comes with a data density of 28.5 Gb/mm².
Speaking of high data read and write speeds, Samsung says that each of these chips comes with an interface speed of 5.6MT. With this, it is said that these 20 chips on a single circuit board are fast enough to maximize the data transfer rate of a PCIe 5.0 SSD.
For now, it is seen that these chips will be used in Samsung's PCIe 5.0 SSD storage next year, which will feature storage options from 4TB to 8TB for the PCIe SSD. Samsung also says that the V-NAND chips can be used in PCIe 6.0 SSDs that will be introduced later.